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GigaMOS TM
Power MOSFETs
N-Channel Enhancement Mode
IXFK230N20T
IXFX230N20T
V DSS =
I D25 =
R DS(on) ≤
t rr ≤
200V
230A
7.5m Ω
200ns
Avalanche Rated
Fast Intrinsic Diode
TO-264 (IXFK)
Symbol
V DSS
V DGR
V GSS
V GSM
I D25
I L(RMS)
I DM
Test Conditions
T J = 25 ° C to 175 ° C
T J = 25 ° C to 175 ° C, R GS = 1M Ω
Continuous
Transient
T C = 25 ° C (Chip Capability)
External Lead Current Limit
T C = 25 ° C, Pulse Width Limited by T JM
Maximum Ratings
200
200
± 20
± 30
230
160
630
V
V
V
V
A
A
A
G
D
S
PLUS247 (IXFX)
Tab
I A
E AS
T C = 25 ° C
T C = 25 ° C
100
3
A
J
G
D
S
Tab
dv/dt
P D
T J
T JM
T stg
I S ≤ I DM , V DD ≤ V DSS , T J ≤ 175°C
T C = 25 ° C
20
1670
-55 ... +175
175
-55 ... +175
V/ns
W
° C
° C
° C
G = Gate
S = Source
Features
D = Drain
Tab = Drain
T L
T SOLD
M d
F C
Weight
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-264)
Mounting Force (PLUS247)
TO-264
PLUS247
300
260
1.13/10
20..120 /4.5..27
10
6
° C
° C
Nm/lb.in.
N/lb.
g
g
International Standard Packages
High Current Handling Capability
Fast Intrinsic Diode
Avalanche Rated
Low R DS(on)
Advantages
Easy to Mount
Symbol Test Conditions
(T J = 25 ° C Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
Space Savings
High Power Density
BV DSS
V GS = 0V, I D = 3mA
200
V
Applications
V GS(th)
I GSS
V DS = V GS , I D = 8mA
V GS = ± 20V, V DS = 0V
3.0
5.0
± 200
V
nA
Synchronous Recification
DC-DC Converters
Battery Chargers
I DSS
R DS(on)
V DS = V DSS , V GS = 0V
V GS = 10V, I D = 60A, Note 1
T J = 150 ° C
50 μ A
3 mA
7.5 m Ω
Switched-Mode and Resonant-Mode
Power Supplies
DC Choppers
AC Motor Drives
Uninterruptible Power Supplies
High Speed Power Switching
Applications
? 2011 IXYS CORPORATION, All Rights Reserved
DS100133A(06/11)
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